IS61WV5128ALL Datasheet, PDF (5/25 Pages) Integrated Silicon Solution, Inc – 512K x 8 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM

IS61WV5128ALL/ALS, IS61WV5128BLL/BLS
IS64WV5128BLL/BLS
TRUTH TABLE
Mode
WE
Not Selected X
(Power-down)
Output Disabled H
Read
H
Write
L
CE OE I/O Operation Vdd Current
HX
High-Z
Isb1, Isb2
LH
High-Z
Icc
LL
Dout
Icc
LX
Din
Icc
ABSOLUTE MAXIMUM RATINGS⁽¹⁾
Symbol Parameter
Value
Unit
Vterm Terminal Voltage with Respect to GND –0.5 to Vdd + 0.5 V
Vdd
Vdd Relates to GND
–0.3 to 4.0
V
Tstg
Storage Temperature
–65 to +150
°C
Pt
Power Dissipation
1.0
W
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to
the device. This is a stress rating only and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
CAPACITANCE^(1,2)
Symbol Parameter
Conditions
Max.
Cin
Input Capacitance
Vin = 0V
6
C_I/O
Input/Output Capacitance
Vout = 0V
8
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: Ta = 25°C, f = 1 MHz, Vdd = 3.3V.
Unit
pF
pF
Integrated Silicon Solution, Inc. — www.issi.com
5
Rev.  I
08/10/09