IS61QDPB41M18A Datasheet, PDF (14/33 Pages) Integrated Silicon Solution, Inc – 512Kx36 and 1Mx18 configuration available

IS61QDPB41M18A/A1/A2
IS61QDPB451236A/A1/A2
Electrical Specifications
Absolute Maximum Ratings
Parameter
Symbol
Min
Max
Units
Power Supply Voltage
V_DD
0.5
2.9
V
I/O Power Supply Voltage
V_DDQ
0.5
2.9
V
DC Input Voltage
V_IN
0.5
V_DD+0.3
V
Data Out Voltage
V_DOUT
0.5
2.6
V
Junction Temperature
T_J
-
110
°C
Storage Temperature
T_STG
55
+125
°C
Note:
Stresses greater than those listed in this table can cause permanent damage to the device. This is a stress rating only and functional operation of
the device at these or any other conditions above those indicated in the operational sections of this datasheet is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
Operating Temperature Range
Temperature Range
Symbol
Min
Max
Units
Commercial
Industrial
T_A
0
+70
°C
T_A
40
+85
°C
DC Electrical Characteristics
(Over the Operating Temperature Range, V_DD=1.8V±5%)
Parameter
x36 Average Power Supply Operating Current
(I_OUT=0, V_IN=V_IH or V_IL )
x18 Average Power Supply Operating Current
(I_OUT=0, V_IN=V_IH or V_IL )
Power Supply Standby Current
(R#=V_IH, W#=V_IH. All other inputs=V_IH or V_IL, I_IH=0)
Input leakage current
( 0 ≤V_IN≤V_DDQ for all input balls except V_REF, ZQ, TCK,
TMS, TDI ball)
Output leakage current
(0 ≤V_OUT ≤V_DDQ for all output balls except TDO ball; Output
must be disabled.)
Output “high” level voltage (IOH=100uA, Nominal ZQ)
Output “low” level voltage (IOL= 100uA, Nominal ZQ)
Symbol
I_DD22
I_DD25
I_DD30
I_DD33
I_DD22
I_DD25
I_DD30
I_DD33
I_SB22
I_SB25
I_SB30
I_SB33
I_LI
I_LO
V_OH
V_OL
Min



2
2
V_DDQ0.2
V_SS
Max
Units Notes
620
580
560
mA
1,2
520
570
530
510
mA
1,2
470
290
280
270
mA
1,2
260
+2
µA
3,4
+2
µA
V_DDQ
V
V_SS+0.2
V
Notes:
1. IOUT = chip output current.
2. The numeric suffix indicates the part operating at speed, as indicated in AC Timing Characteristics table (that is, I_DD25 indicates 2.5ns cycle
time).
3. ODT must be disabled.
4. Balls with ODT and DOFF# do not follow this spec, I_LI = ±100uA.
Integrated Silicon Solution, Inc.- www.issi.com
Rev. B
14
10/02/2014