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IS66WVE2M16DBLL Datasheet, PDF (1/28 Pages) Integrated Silicon Solution, Inc – 3.0V Core Async/Page PSRAM
IS66WVE2M16DBLL
3.0V Core Async/Page PSRAM
Overview
The IS66WVE2M16DBLL is an integrated memory device containing 32Mbit Pseudo Static Random Access
Memory using a self-refresh DRAM array organized as 2M words by 16 bits. The device includes several
power saving modes : Partial Array Refresh mode where data is retained in a portion of the array and
Deep Power Down mode. Both these modes reduce standby current drain. The die has separate power
rails, VDDQ and VSSQ for the I/O to be run from a separate power supply from the device core.
Features
 Asynchronous and page mode interface
 Dual voltage rails for optional performance
 VDD 2.7V~3.6V, VDDQ 2.7V~3.6V
 Page mode read access
 Interpage Read access : 70ns
 Intrapage Read access : 20ns
 Low Power Consumption
 Asynchronous Operation < 30 mA
 Intrapage Read < 18mA
 Standby < 150 uA (max.)
 Deep power-down (DPD) < 3uA (Typ)
 Low Power Feature
 Temperature Controlled Refresh
 Partial Array Refresh
 Deep power-down (DPD) mode
 Operating temperature Range
Industrial -40°C~85°C
 Package:
48-ball TFBGA
Copyright © 2012 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its
products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services
described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information
and before placing orders for products.
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or
malfunction of the product can reasonably be expected to cause failure of the life support system or to significantly affect its safety or
effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance to
its satisfaction, that:
a.) the risk of injury or damage has been minimized;
b.) the user assume all such risks; and
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances
Rev.A | May 2012
www.issi.com - SRAM@issi.com
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