English
Language : 

HC55120_06 Datasheet, PDF (10/36 Pages) Intersil Corporation – Low Power Universal SLIC Family
Electrical Specifications
TA = -40°C to 85°C, VCC = +5V ±5%, VBH = -48V, VBL = -24V, PTG = Open, RP1 = RP2 = 0Ω, ZT = 120kΩ, RLIM = 38.3kΩ, RD = 50kΩ, RDC_RAC = 20kΩ,
ROH = 40kΩ, CH = 0.1µF, CDC = 4.7µF, CRT/REV = 0.47µF, GND = 0V, RL = 600Ω. Unless Otherwise Specified. (•) Symbol used to indicate the test
applies to the part. (NA) symbol used to indicate the test does not apply to the part. (Continued)
PARAMETER
TEST CONDITIONS
BATTERY FEED CHARACTERISTICS
Constant Loop Current Tolerance 18mA ≤ IL ≤ 45mA,
IL = 26.5mA, RLIM = 38.3kΩ
Forward and Reverse
(Note 27, Figure 10)
Tip Open State TIPX Leakage
Current
S = Closed (Figure 11)
Tip Open State RINGX Current
Tip Open State RINGX Voltage
R1 = 0Ω, VBH = -48V, RLIM = 38.3kΩ
R1 = 2.5kΩ, VBH = -48V (Figure 11)
5mA < IR1 < 26mA (Figure 11)
MIN
0.92IL
-
22.6
15.5
-
TYP
IL
-
26.8
17.1
42.8
MAX
1.08IL
-200
31
18.2
-
UNITS
mA
µA
mA
mA
V
HC55120 HC55121 HC55130/1 HC55140/1 HC55142/3 HC55150/1
Forward
Forward
Only
•
Only
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
Tip Voltage (Ground Start)
Active State, (S Open) R1 = 150Ω
-5.3 -4.8 -4.3
V
(Figure 11)
Tip Voltage (Ground Start)
Active State, (S Closed) Tip Lead to
-48V Through 7kΩ, Ring Lead to
-5.3 -4.8 -4.3
V
Ground Through 150Ω (Figure 11)
Open Circuit State Loop Current (Active) RL = 0Ω
-20
0
20
µA
NA
NA
NA
•
NA
NA
NA
•
•
•
•
•
•
NA
•
NA
•
•
LOOP CURRENT DETECTOR
Programmable Threshold
Forward and Reverse
GROUND KEY DETECTOR
ILTh = (500/ RD) ≥ 5mA,
ILTh = 8.5mA
RD = 58.8kΩ
0.9ILTh ILTh 1.1ILTh
mA
Forward
Forward
Only
•
Only
•
Ground Key Detector Threshold Tip Open
5
8
11
mA
Tip/Ring Current Difference
Active (Note 29, R1 = 2.5kΩ, Figure 12) 12.5
20
27.5
mA
•
•
NA
•
•
•
•
NA
LINE VOLTAGE MEASUREMENT
Pulse Width (GKD_LVM)
Pulse Width = (20)(CREV.../ILIM)
0.32 0.36 0.4
ms/V
NA
NA
NA
•
•
•
RING TRIP DETECTOR (DT, DR)
Ring Trip Comparator Current
Source Res = 2MΩ
-
2
-
µA
•
•
•
•
•
•
Input Common-Mode Range
Source Res = 2MΩ
-
-
±200
V
•
•
•
•
•
•