PTFA220081M Datasheet, PDF (9/17 Pages) Infineon Technologies AG – High Power RF LDMOS Field Effect Transistor 8 W, 700-2200 MHz

Confidential, Limited Internal Distribution
Typical Performance, 2140 MHz
Two-carrier WCDMA 3GPP
V_DD = 28 V, I_DQ = 100 mA, ƒ = 2140 MHz,
3GPP WCDMA, P/AR = 8:1,
10 MHz carrier spacing, BW 3.84 MHz
18.0
50
17.5
Gain
40
17.0
30
16.5
20
16.0
Efficiency
10
15.5
0
27 28 29 30 31 32 33 34 35 36
Output Power (dBm)
PTFA220081M
Two-carrier WCDMA 3GPP Drive-up
V_DD = 28 V, I_DQ = 100 mA, ƒ = 2140 MHz
3GPP WCDMA, P/AR = 8:1,
10 MHz carrier spacing, BW 3.84 MHz
0
50
-10
Efficiency
40
-20
IMD Up
30
IMD Low
-30
20
-40
ACPR
10
-50
0
27 28 29 30 31 32 33 34 35 36
Output Power (dBm)
CW
Gain & Efficiency vs. Output Power
V_DD = 28 V, I_DQ = 100 mA, ƒ = 2140 MHz
22
Gain +85°C
65
Gain +20°C
21
Gain -30°C
60
20
Ef f iciency +85°C
55
19
Ef f iciency +20°C
Ef f iciency -30°C
50
18
45
17
40
16
35
15
30
14
25
13
20
32 33 34 35 36 37 38 39 40 41
Output Power (dBm)
CW
Gain & Effciency vs. Output Power & VDD
I_DQ = 100 mA, ƒ = 2140 MHz
18.0
60
17.5
Gain
50
17.0
40
16.5
30
16.0
VDD = 24 V
20
VDD = 28 V
Efficiency VDD = 32 V
15.5
10
32 33 34 35 36 37 38 39 40 41
Output Power (dBm)
Data Sheet
9 of 17
Rev. 04, 2010-06-09