PTFA220081M Datasheet, PDF (5/17 Pages) Infineon Technologies AG – High Power RF LDMOS Field Effect Transistor 8 W, 700-2200 MHz

Confidential, Limited Internal Distribution
Reference Circuit, 920 – 960 MHz
PTFA220081M
RF_IN
L1
22 nH
TL104
TL105
3
1
2
4
S2
TL108
TL106
TL109
R103
2000 Ohm
R104
10 Ohm S3
3
R106
510 Ohm
TL113
C105
68 pF
TL102
TL101
2
1
3
C106
5.6 pF
TL114
TL111
2
1
3
TL112
2
1
3
C104
16 pF
C107
16 pF
TL103
R107
10 Ohm
R105
1.3 Ohm TL110 2
3
1
a080304m_960 MHz_bdin_06-03-2010
4
TL107
GATE_DUT
PORT
3
C103
1000 pF
S5
8
In
1
Out
NC
NC
4
2
36
75
C102
1000 pF
C101
1000 pF
R102
1200 Ohm
R101
1300 Ohm
S4
2C
1
4
B
3E
VDD
Reference circuit input schematic for ƒ = 920 – 960 MHz
TL205 TL204
TL206
2
TL225 ³
1
TL217
VDD
TL218
TL224
2
1
3
C205
4710000 pF
TL213
C204
10000000 pF
TL216
TL223
2
3
1
C202
68 pF
TL202
2
3
1
TL201
2
1
3
TL207
R201
0 Ohm
TL208
TL214
TL203
TL215
3
a080304m_960 MHz_bdout_06-03-2010
2
1
DRAIN_DUT
TL212
TL211 TL209
3
2
1
TL210
TL222 TL221
1
2
3
C201
3.6 pF
TL219
C203
68 pF
TL220
RF_OUT
Reference circuit output schematic for ƒ = 920 – 960 MHz
Data Sheet
5 of 17
Rev. 04, 2010-06-09