PTFA220081M Datasheet, PDF (3/17 Pages) Infineon Technologies AG – High Power RF LDMOS Field Effect Transistor 8 W, 700-2200 MHz

Confidential, Limited Internal Distribution
Typical Performance, 940 MHz
Two-carrier WCDMA 3GPP
V_DD = 28 V, I_DQ = 100 mA, ƒ = 940 MHz
3GPP WCDMA, P/AR = 8:1, 10 MHz carrier
spacing, BW 3.84 MHz
21.5
60
21.0
Gain
50
20.5
40
20.0
30
19.5
20
Efficiency
19.0
10
29 30 31 32 33 34 35 36 37 38 39
Output Power (dBm)
PTFA220081M
Two-carrier WCDMA 3GPP Drive-up
V_DD = 28 V, I_DQ = 100 mA, ƒ = 940 MHz
3GPP WCDMA, P/AR = 8:1, 10 MHz carrier
spacing, BW 3.84 MHz
0
55
Efficiency
-10
45
IMD Up
-20
35
IMD Low
-30
25
-40
ACPR
15
-50
5
30 31 32 33 34 35 36 37 38 39
Output Power (dBm)
CW
Gain & Efficiency vs. Output Power & VDD
I_DQ = 100 mA, ƒ = 940 MHz
22.0
70
VDD = 24 V
21.5
VDD = 28 V
VDD = 32 V
60
21.0 _Gain
50
20.5
40
20.0
30
19.5
20
Efficiency
19.0
10
32 33 34 35 36 37 38 39 40 41 42
Output Power (dBm)
Power Sweep, CW
Gain & Efficiency vs. Output Power
V_DD = 28 V, I_DQ = 100 mA
20.8
70
20.4
Gain
60
20.0
50
19.6 ^Efficiency
920 MHz
19.2
940 MHz
960 MHz
18.8
34 35 36 37 38 39 40
Output Power (dBm)
40
30
20
41
Data Sheet
3 of 17
Rev. 04, 2010-06-09