PTFA220081M Datasheet, PDF (10/17 Pages) Infineon Technologies AG – High Power RF LDMOS Field Effect Transistor 8 W, 700-2200 MHz

Confidential, Limited Internal Distribution
Typical Performance, 2140 MHz (cont.)
Two-tone Drive-up
V_DD = 28 V, I_DQ = 100 mA,
ƒ₁ = 2139.5 MHz, ƒ₂ = 2140.5 MHz
-10
50
-20
40
-30
Efficiency
30
-40
20
IMD3
-50
10
33 34 35 36 37 38 39 40 41
Output Power, PEP (dBm)
PTFA220081M
Two-tone Drive-up
V_DD = 28 V, I_DQ = 100 mA,
ƒ₁ = 2139.5 MHz, ƒ₂ = 2140.5 MHz
18.0
17.5
17.0
16.5
16.0
15.5
15.0
35
Gain
Efficiency
36
37
38
39
40
Output Power, PEP (dBm)
50
45
40
35
30
25
20
41
Two-tone Broadband
Efficiency & IMD vs. Frequency
V_DD = 28 V, I_DQ = 100 mA, Average PEP = 8 W,
Spacing = 100 kHz
45
-15
40
Efficiency
35
-20
IMD3
-25
30
-30
25
-35
20
IMD5
-40
15
-45
10
2040
2080
2120 2160 2200
Frequency (MHz)
-50
2240
Two-tone Broadband
Gain & Return Loss vs. Frequency
V_DD = 28 V, I_DQ = 100 mA, Average PEP = 8 W,
Spacing = 100 kHz
18
0
17
-2
Gain
16
-4
15
-6
14
-8
RL
13
-10
12
2040
2080
2120 2160 2200
Frequency (MHz)
-12
2240
Data Sheet
10 of 17
Rev. 04, 2010-06-09