PTFA220081M Datasheet, PDF (14/17 Pages) Infineon Technologies AG – High Power RF LDMOS Field Effect Transistor 8 W, 700-2200 MHz

Confidential, Limited Internal Distribution
Reference Circuit, 2110 – 2170 MHz (cont.)
Electrical Characteristics at 2170 MHz (cont.)
Transmission Electrical
Dimensions: mm
Line Characteristics
TL224
0.015 λ, 47.12 W
W1 = 1.270, W2 = 1.270, W3 = 1.270
TL225
0.111 λ, 47.12 W
W = 1.270, L = 9.225
TL226
0.015 λ, 47.12 W
W1 = 1.270, W2 = 1.270, W3 = 1.270
Reference Circuit, 2110 – 2170 MHz (cont.)
PTFA220081M
Dimensions: mils
W1 = 50, W2 = 50, W3 = 50
W = 50, L = 363
W1 = 50, W2 = 50, W3 = 50
RF_IN
C106
R101
C103
C102
C101
VDD
R104
R103
S5
S4
R106
C205
S3
R102
S2
R105
C104 C111
C107
C108
C109 C110 C105
1
DUT
C204
R201
C202
C203
C201
RF_OUT
PTFA220081M_01_CUS
Reference circuit assembly diagram (not to scale)*
* Gerber Files for this circuit available on request
Data Sheet
2170 MHz
14 of 17
RO4350, .020
(73)
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Rev. 04, 2010-06-09