PTFA220081M Datasheet, PDF (11/17 Pages) Infineon Technologies AG – High Power RF LDMOS Field Effect Transistor 8 W, 700-2200 MHz

Confidential, Limited Internal Distribution
Typical Performance, 2140 MHz (cont.)
Two-tone Gain vs. Output Power
V_DD = 28 V, ƒ₁ = 2139.5 MHz, ƒ₂ = 2140.5 MHz
18.0
17.5
I_DQ = 120 mA
I_DQ = 100 mA
17.0
16.5
I_DQ = 80 mA
16.0
33 34 35 36 37 38 39 40 41
Output Power (dBm)
PTFA220081M
Power Sweep, CW
Gain & Efficiency vs. Output Power
V_DD = 28 V, I_DQ = 100 mA
17.5
65
Gain
17.0
55
16.5
45
16.0
35
Efficiency
15.5
2110 MHz
25
2140 MHz
2170 MHz
15.0
15
31 32 33 34 35 36 37 38 39 40 41
Output Power (dBm)
Intermodulation Distortion vs.
Tone Spacing
V_DD = 28 V, I_DQ = 100 mA, ƒ = 2140 MHz,
PEP = 8 W
-25
-30
3rd Order
-35
-40
-45
5th
-50
7th
-55
0 10 20 30 40 50 60 70 80
Tone Spacing (MHz)
Intermodulation Distortion vs.
Output Power
V_DD = 28 V, I_DQ = 100 mA,
ƒ₁ = 2139.5 MHz, ƒ₂ = 2140.5 MHz
-20
3rd Order
-30
5th
-40
-50
7th
-60
35
36
37
38
39
40
41
Output Power, PEP (dBm)
Data Sheet
11 of 17
Rev. 04, 2010-06-09