PTFA220081M Datasheet, PDF (2/17 Pages) Infineon Technologies AG – High Power RF LDMOS Field Effect Transistor 8 W, 700-2200 MHz

PTFA220081M
Confidential, Limited Internal Distribution
RF Characteristics (cont.)
Two-tone Measurements (not subject to production test – verified by design / characterization in Infineon test fixture)
V_DD = 28 V, I_DQ = 100 mA, P_OUT = 8 W PEP, ƒ = 940 MHz, tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Input Return Loss
Symbol Min Typ
G_ps
—
20.7
hD
—
39
IMD
—
–30
IRL
—
20
Max
—
—
—
—
Unit
dB
%
dBc
dB
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
Conditions
V_GS = 0 V, I_DS = 10 µA
V_DS = 28 V, V_GS = 0 V
V_GS = 10 V, V_DS = 0.1 A
V_DS = 28 V, I_DQ = 100 mA
V_GS = 10 V, V_DS = 0 V
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Storage Temperature Range
Thermal Resistance (TCASE = 70°C, 8 W DC )
Symbol
V_(BR)DSS
I_DSS
R_DS(on)
V_GS
I_GSS
Min
65
—
—
2.0
—
Typ
—
—
1.10
2.5
—
Max
—
1.0
—
3.0
1.0
Symbol Value
V_DSS
65
V_GS –0.5 to +12
T_J
175
T_STG –65 to +150
R_qJC
4.2
Unit
V
µA
W
V
µA
Unit
V
V
°C
°C
°C/W
Moisture Sensitivity Level
Level
3
Test Standard
Package Temperature
IPC/JEDEC J-STD-020
260
Unit
°C
Ordering Information
Type
PTFA220081M V4
Package Outline
PG-SON-10
Package Description
Molded plastic, SMD
Shipping
Tape & Reel, 500 pcs
Data Sheet
2 of 17
Rev. 04, 2010-06-09