PTFA220081M Datasheet, PDF (1/17 Pages) Infineon Technologies AG – High Power RF LDMOS Field Effect Transistor 8 W, 700-2200 MHz

PTFA220081M
Confidential, Limited Internal Distribution
High Power RF LDMOS Field Effect Transistor
8 W, 700 – 2200 MHz
Description
The PTFA220081M an unmatched 8-watt LDMOS FET suitable for
power amplifiers applications with frequencies from 700 MHz to 2200
MHz. This LDMOS transistor offers excellent gain, efficiency and
linearity performance in a small overmolded plastic package.
PTFA220081M
Package PG-SON-10
Two-tone Drive-up
V_DD = 28 V, I_DQ = 100 mA,
ƒ₁ = 939.5 M Hz, ƒ₂ = 940.5 M Hz
-10
50
-20
Efficiency
40
-30
30
IMD 3rd
-40
20
-50
IMD 5th
10
-60
34
35 36 37 38 39 40
Output Power, PEP (dBm)
0
41
Features
• Typical two-carrier WCDMA performance,
8 dB PAR
- P_OUT = 33 dBm Avg
- ACPR = –40 dBc
• Typical CW performance, 940 MHz, 28 V
- P_OUT = 40 dBm
- Efficiency = 59%
- Gain = 20 dB
• Typical CW performance, 2140 MHz, 28 V
- P_OUT = 40 dBm
- Efficiency = 50%
- Gain = 15 dB
• Capable of handling 10:1 VSWR @ 28 V, 8 W
(CW) output power
• Integrated ESD protection : Human Body Model,
Class 2 (minimum)
• Excellent thermal stability
• Pb-free and RoHS compliant
RF Characteristics
Two-tone Measurements (not subject to production test – verified by design / characterization in Infineon test fixture)
V_DD = 28 V, I_DQ = 100 mA, P_OUT = 8 W PEP, ƒ = 2140 MHz, tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol Min Typ
G_ps
—
17
hD
—
38
IMD
—
–31
Max
—
—
—
Unit
dB
%
dBc
All published data at T_CASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 17
Rev. 04, 2010-06-09