PTF191601F Datasheet, PDF (9/10 Pages) Infineon Technologies AG – Thermally-Enhnaced High Power RF LDMOS FETs 160 W, 1930-1990 MHz

Package Outline Specifications (cont.)
Package 31260
45° X 2.031
[.080]
2X 12.70
[.500]
D
PTF191601E
PTF191601F
2x 4.83±0.50
[.190±.020]
13.72
[.540]
LID
13.
21
+0.10
–0.15
[.520 ^+.004 ]
–.006
.
23.37±0.51
[.920±.020]
G
22.35±0.23
[.880±.009]
1.02
[.040]
S
23.11
[.910]
SPH 1.57
[.062]
4.11±0.38
[.162±.015]
0 .038 [.0015] -A-
260-cases_31260
Diagram Notes:
1. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001].
2. All tolerances ± 0.127 [.005] unless specified otherwise.
3. Pins: D = drain, S = source, G = gate.
4. Interpret dimensions and tolerances per ASME Y14.5M-1994.
5. Primary dimensions are mm. Alternate dimensions are inches.
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Data Sheet
9 of 10
2004-09-16