PTF191601F Datasheet, PDF (2/10 Pages) Infineon Technologies AG – Thermally-Enhnaced High Power RF LDMOS FETs 160 W, 1930-1990 MHz

PTF191601E
PTF191601F
RF Characteristics (cont.)
Two-Tone Measurements (tested in Infineon test fixture)
V_DD = 28 V, I_DQ = 2.0 A, P_OUT = 150 W PEP, f = 1990 MHz, tone spacing = 1 MHz
Characteristic
Symbol Min Typ
Gain
G_ps
12.5
14
Drain Efficiency @ –30 dBc IM3
η_D
33
35
Intermodulation Distortion
IMD
—
–30
Max
—
—
–28
Units
dB
%
dBc
DC Characteristics at T_CASE = 25°C unless otherwise indicated
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
Conditions
V_GS = 0 V, I_DS = 10 µA
V_DS = 28 V, V_GS = 0 V
V_GS = 10 V, V_DS = 0.1 V
V_DS = 28 V, I_DQ = 2.0 A
V_GS = 10 V, V_DS = 0 V
Symbol
V_(BR)DSS
I_DSS
R_DS(on)
V_GS
I_GSS
Min Typ
65
—
—
—
—
0.065
2.5
3.2
—
—
Max
—
1.0
—
4.0
1.0
Units
V
µA
Ω
V
µA
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (T_CASE = 70°C, 160 W CW)
Symbol
V_DSS
V_GS
T_J
P_D
T_STG
R_θJC
Value
65
–0.5 to +12
200
603
3.45
–40 to +150
0.29
Unit
V
V
°C
W
W/°C
°C
°C/W
Ordering Information
Type
PTF191601E
PTF191601F*
Package Outline
30260
31260
Package Description
Thermally-enhanced slotted flange, single-ended
Thermally-enhanced earless flange, single-ended
Marking
PTF191601E
PTF191601F
*See Infineon distributor for future availability.
Data Sheet
2 of 10
2004-09-16