PTF191601F Datasheet, PDF (8/10 Pages) Infineon Technologies AG – Thermally-Enhnaced High Power RF LDMOS FETs 160 W, 1930-1990 MHz

PTF191601E
PTF191601F
Package Outline Specifications
45° X (2.03
[.080])
Package 30260
2X 12.70
[.500]
4X R 1.52
[.060]
(2X 4.83±0.50
[.190±.020])
LID 13.21+–00..1105
[.520+–..000064 ]
D
S
2X 3.25
[.128]
2X 1.63
[.064] R
13.72
[.540]
23.37±0.51
[.920±.020]
G
SPH 1.57
[.062]
1.02
[.040]
22.35±0.23
[.880±.009]
27.94
[1.100]
34.04
[1.340]
4.11±0.38
[.162±.015]
0.038 [.0015] _-A-
260-cases_30260
Diagram Notes:
1. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001].
2. All tolerances ± 0.127 [.005] unless specified otherwise.
3. Pins: D = drain, S = source, G = gate.
4. Interpret dimensions and tolerances per ASME Y14.5M-1994.
5. Primary dimensions are mm. Alternate dimensions are inches.
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Data Sheet
8 of 10
2004-09-16