PTF191601F Datasheet, PDF (4/10 Pages) Infineon Technologies AG – Thermally-Enhnaced High Power RF LDMOS FETs 160 W, 1930-1990 MHz

Typical Performance (cont.)
Gain vs. Output Power
V_DD = 28 V, f = 1990 MHz
16.0
15.6 I_DQ = 2.4 A
15.2
14.8
I_DQ = 2.0 A
14.4 _{IDQ = 1.6 A}
14.0
30
35
40
45
50
55
Output Power (dBm)
PTF191601E
PTF191601F
Output Power vs. Supply Voltage
I_DQ = 2.0 A, f = 1990 MHz
53.0
52.5
52.0
51.5
51.0
50.5
50.0
20
25
30
35
Supply Voltage (V)
Intermodulation Distortion vs. Output Power
V_DD = 28 V, I_DQ = 2.0 A, f₁ = 1990 MHz, f₂ = 1989 MHz
-20
-30
-40
-50
-60
-70
-80
40
3rd Order
5th
7th
45
50
55
Output Power, PEP (dBm)
3-Carrier CDMA 2000 Performance
V_DD = 28 V, I_DQ = 2.0 A, f = 1990 MHz
40
-40
35
Adj 1.98 MHz
-45
30
-50
25 Alt 1, 3.21 MHz
-55
20
-60
15
-65
10
5 _Efficiency
0
39
41
43
-70
Alt 2, 5.23 MHz
-75
-80
45
47
49
Output Power (dBm)
Data Sheet
4 of 10
2004-09-16