PTF191601F Datasheet, PDF (5/10 Pages) Infineon Technologies AG – Thermally-Enhnaced High Power RF LDMOS FETs 160 W, 1930-1990 MHz

Typical Performance (cont.)
IS-95 CDMA Performance
V_DD = 28 V, I_DQ = 450 mA, f = 880 MHz
40
35
30
25
20
15
10
5
0
35
-40
Adj 750 kHz
-45
-50
Alt 1 1.98MHz
-55
-60
-65
Efficiency _-70
-75
37 39 41 43 45 47
Output Power (dBm), Avg.
-80
49
PTF191601E
PTF191601F
Gate-Source Voltage vs. Temperature
Voltage normalized to typical gate voltage,
series show current.
1.03
1.20 A
1.02
4.50 A
1.01
7.80 A
11.40 A
1.00
14.85 A
0.99
18.00 A
0.98
0.97
0.96
0.95
-20 0
20 40 60 80 100
Case Temperature (ºC)
Broadband Circuit Impedance
Z Source
D
Z Load
Frequency
MHz
1900
1920
1930
1960
1990
2000
2020
G
S
Z Source Ω
R
jX
1.6
–2.2
1.4
–1.9
1.5
–1.8
1.5
–1.7
1.1
–1.5
1.0
–1.4
1.0
–1.0
Z Load Ω
R
jX
1.5
1.9
1.6
2.0
1.6
2.1
1.6
2.2
1.5
2.3
1.4
2.4
1.4
2.5
Z₀ = 50 Ω
Z Load
2020 MHz
Z Source
1900 MHz
2020 MHz
1900 MHz
0.1
Data Sheet
5 of 10
2004-09-16