PTF191601F Datasheet, PDF (6/10 Pages) Infineon Technologies AG – Thermally-Enhnaced High Power RF LDMOS FETs 160 W, 1930-1990 MHz

PTF191601E
PTF191601F
Reference Circuit
R5
1 . 3 KV
C14
0.001µF
R4
1 .0KV
Q1
BCP5 6
C15
0.001µF
VDD
QQ1
LM7805
C16
0.001µF
R6
2 KV
R8
2 4 KV
R7
R1
5.1KV 10V
C1
C2 R2
0.1µF 10µF 5.1KV
C3
4.7pF _R3
1 0V
RF_IN
C5
10pF
l1 l2
l3
C4
0.9pF
l7
l4 l5 l6
l8
C6
1.5pF
DUT
C7
10pF
C8
100µF
l9
C9
0.7pF
C11
10pF
l11 l12 l13 l14
l15
C10
l10
0.7pF
VDD
RF_OUT
C12
10pF
C13
100µF
191601ef_sch
Reference Circit Schematic for f = 1960 MHz
Circuit Assembly Information
DUT
PCB
PTF191601E or PTF191601F
0.76 mm [.030”] thick, ε_r = 4.5
LDMOS Transistor
Rogers TMM4
2 oz. copper
Microstrip
l1
l2
l3
l4
l5
l6
l7
l8
l9, l10
l11
l12 (taper)
l13 (taper)
l14
l15
Electrical Characteristics at 1960 MHz* Dimensions: L x W (mm)
0.017 λ, 50.0 Ω
0.017 λ, 50.0 Ω
0.152 λ, 43.0 Ω
0.137 λ, 43.0 Ω
0.016 λ, 11.8 Ω
0.069 λ, 7.2 Ω
0.059 λ, 58.0 Ω
0.017 λ, 7.2 Ω
0.357 λ, 57.0 Ω
0.030 λ, 4.1 Ω
0.085 λ, 4.5 Ω / 5.5 Ω
0.105 λ, 5.5 Ω / 43.0 Ω
0.112 λ, 43.0 Ω
0.048 λ, 50.0 Ω
1.40 x 1.30
1.40 x 1.30
12.47 x 1.85
1.12 x 1.85
1.24 x 10.16
5.13 x 17.75
4.98 x 1.07
1.40 x 17.75
30.05 x 1.12
2.41 x 29.74
8.13 x 29.46 / 17.65
7.37 x 17.65 / 1.85
9.14 x 1.85
3.96 x 1.30
*Electrical characteristics are rounded.
Data Sheet
6 of 10
Dimensions: L x W (in.)
0.055 x 0.051
0.055 x 0.051
0.491 x 0.073
0.044 x 0.073
0.049 x 0.400
0.202 x 0.699
0.196 x 0.042
0.055 x 0.699
1.183 x 0.044
0.095 x 1.171
0.320 x 1.160 / 0.695
0.290 x 0.695 / 0.073
0.360 x 0.073
0.156 x 0.051
2004-09-16