PTF191601F Datasheet, PDF (1/10 Pages) Infineon Technologies AG – Thermally-Enhnaced High Power RF LDMOS FETs 160 W, 1930-1990 MHz

PTF191601E
PTF191601F
Thermally-Enhnaced High Power RF LDMOS FETs
160 W, 1930 – 1990 MHz
Description
The PTF191601E and PTF191601F are 160-watt, internally-matched
GOLDMOS FETs intended for GSM EDGE and CDMA applications in the
1930 to 1990 MHz band. Thermally-enhanced packaging provides the
coolest operation available. Full gold metallization ensures excellent
device lifetime and reliability.
PTF191601E
Package 30260
PTF191601F*
Package 31260
Typical EDGE Performance
V_DD = 28 V, I_DQ = 2.0 A, f = 1989.1MHz
4
T_CASE = 25°C
40
T_CASE = 85°C
3
30
Ef f icienc y
2
20
1
10
EV M
0
0
35
40
45
50
Output Power (dBm)
ESD: Electrostatic discharge sensitive device—observe handling
precautions!
Features
• Thermally-enhanced packaging
• Broadband internal matching
• Typical EDGE performance
- Average output power = 80 W
- Gain = 14 dB
- Efficiency = 35%
- EVM = 2.5%
• Typical CW performance
- Output power at P–1dB = 180 W
- Gain = 13 dB
- Efficiency = 47%
• Integrated ESD protection: Human Body
Model, Class 1 (minimum)
• Excellent thermal stability
• Low HCI drift
• Capable of handling 10:1 VSWR @ 28 V,
160 W (CW) output power
RF Characteristics at T_CASE = 25°C unless otherwise indicated
EDGE Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
V_DD = 28 V, I_DQ = 2.0 A, P_OUT = 80 W, f = 1989.8 MHz
Characteristic
Symbol Min Typ
Max Units
Error Vector Magnitude
EVM (RMS) —
2.5
—
%
Modulation Spectrum @ 400 kHz
ACPR
—
–60
—
dBc
Modulation Spectrum @ 600 kHz
ACPR
—
–73
—
dBc
Gain
Drain Efficiency
G_ps
—
14
—
dB
η_D
—
35
—
%
*See Infineon distributor for future availability.
Data Sheet
1 of 10
2004-09-16