PTF191601F Datasheet, PDF (3/10 Pages) Infineon Technologies AG – Thermally-Enhnaced High Power RF LDMOS FETs 160 W, 1930-1990 MHz

PTF191601E
PTF191601F
Typical Performance (data taken in production test fixture)
EDGE Modulation Spectrum Performance
V_DD = 28 V, I_DQ = 2.0 A, f = 1989.1 MHz
T_CASE = 25°C
-55 T_CASE = 85°C
50
-60
40
400 kHz
-65
30
-70
600 kHz
-75
Efficiency 20
10
-80
0
36 38 40 42 44 46 48 50
Output Power (dBm)
EVM & Modulation Spectrum Performance
V_DD = 28 V, P_OUT = 63 W, f = 1989.1 MHz
2
-55
400 KHz
2
-60
2
-65
600 KHz
1
-70
1 EVM
-75
1
-80
1.3 1.5 1.7 1.9 2.1 2.3 2.5 2.7
Quiscent Drain Current (A)
Gain & Efficiency vs. Output Power
V_DD = 28 V, I_DQ = 2.0 A, f = 1990 MHz
18
17
16
15 _Gain
14
13
12 _Efficiency
11
30
35
40
45
50
Output Power (dBm)
70
60
50
40
30
20
10
0
55
Broadband Performance
V_DD = 28 V, I_DQ = 2.0 A
20
60
Gain
15
10
55
Output Pow er
5
0
50
Ef f iciency
-5
-10
45
Return Loss
-15
-20
40
1900 1920 1940 1960 1980 2000 2020
Frequency (MHz)
All published data at T_CASE = 25°C unless otherwise indicated
Data Sheet
3 of 10
2004-09-16