PTF080901 Datasheet, PDF (9/10 Pages) Infineon Technologies AG – LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz

PTF080901
Package Outline Specifications
4.83±0.51
[.190±.020]
Package 31248
( 45° X 2.72
[.107])
CL
D
LID 9.40^+-00..1105
9.78
[ .370^+-.0.00046]
[.385]
19.43±0.51
CL ^{[.765±.020]}
G
2X 12.70
[.500]
SPH 1.58
[.062]
19.81±0.20
[.780±.008]
0.51
[.020]
1.02
[.040]
0.0381 [.0015] -A-
S
3.61±0.38
[.142±.015]
20.57
[.810]
P K G _248_1
Notes: Unless otherwise specified
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. Pins: D = drain, S = source, G = gate
4. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001]
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/rfpower
Data Sheet
9
2004-04-05