PTF080901 Datasheet, PDF (5/10 Pages) Infineon Technologies AG – LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz

PTF080901
Typical Performance (cont.)
Three–Carrier CDMA 2000 Performance
V_DD = 28 V, I_DQ = 700 mA, f = 880 MHz
50
45
40
35
30
25
20
15
39
-44
ACP Up
ACP Low
-47
ALT Up
-50
-53
-56
Ef f iciency
-59
-62
40 41 42 43 44
Output Power (dBm), Avg.
-65
45
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage.
Series show current.
1.03
1.50 A
1.02
3.00 A
4.50 A
1.01
6.00 A
1.00
7.50 A
0.99
9.00 A
0.98
0.97
0.96
-20
0
20 40 60 80 100
Case Temperature (ºC)
Broadband Circuit Impedance
Z Source
D
Z Load
Z₀ = 50 Ω
Frequency
MHz
860
920
940
960
980
G
S
Z Source Ω
R
jX
2.50
–1.09
2.67
–0.43
2.79
–0.35
2.94
0.12
2.91
0.37
Z Load Ω
R
jX
1.98
–1.08
1.99
–0.32
1.87
–0.21
1.85
0.27
1.79
0.53
Z Load Z Source
980 MHz 980 MHz
860 MHz 860 MHz
0 .1
All published data at T_CASE = 25°C unless otherwise indicated.
Data Sheet
5
2004-04-05