PTF080901 Datasheet, PDF (3/10 Pages) Infineon Technologies AG – LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz

PTF080901
Typical Performance (cont.)
Intermodulation Distortion vs. Output Power
(as measured in a broadband circuit)
V_DD = 28 V, I_DQ = 650 mA, f₁ = 959 MHz, f₂ = 960 MHz
0
-10
-20
-30
3rd Order
-40
-50
5th
-60
-70
7th
-80
43
45
47
49
51
Output Power (dBm), PEP
Typical P_OUT, Gain & Efficiency (at P-1dB)
vs. Frequency
V_DD = 28 V, I_DQ = 650 mA
18
80
17 ^Gain
70
16
Efficiency ⁶⁰
15
Output Pow er ⁵⁰
14
860
880
900
920
940
Frequency (MHz)
40
960
IM3 vs. Output Power at Selected Biases
V_DD = 28 V, f₁ = 959, f₂ = 960 MHz
-20
-25
-30 _{480 mA}
-35
-40
650 mA
-45
-50 ^{820 mA}
-55
-60
39 41 43 45 47 49 51
Output Power (dBm), PEP
Broadband Performance
V_DD = 28 V, I_DQ = 650 mA, P_OUT = 45 W
60
0
50
Ef f iciency
40
30
-3
-6
Return Loss -9
20
Gain
10
860 880
900 920 940
Frequency (MHz)
-12
-15
960
All published data at T_CASE = 25°C unless otherwise indicated.
Data Sheet
3
2004-04-05