PTF080901 Datasheet, PDF (2/10 Pages) Infineon Technologies AG – LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz

PTF080901
DC Characteristics at T_CASE = 25°C unless otherwise indicated
Characteristic
Drain–Source Breakdown Voltage
Drain Leakage Current
On–State Resistance
Operating Gate Voltage
Gate Leakage Current
Conditions
V_GS = 0 V, I_DS = 10 µA
V_DS = 28 V, V_GS = 0 V
V_GS = 10 V, V_DS = 0.1 V
V_DS = 28 V, I_DQ = 650 mA
V_GS = 10 V, V_DS = 0 V
Symbol
V_(BR)DSS
I_DSS
R_DS(on)
V_GS
I_GSS
Maximum Ratings
Parameter
Drain–Source Voltage
Gate–Source Voltage
Junction Temperature
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (T_CASE = 70°C)
Symbol
V_DSS
V_GS
T_J
P_D
T_STG
R_θJC
Typical Performance (measurements taken in production test fixture)
Min Typ
65
—
—
—
—
0.1
2.5
3.2
—
—
Max
—
1.0
—
4
1.0
Value
65
–0.5 to +12
200
335
1.9
–40 to +150
0.52
Unit
V
µA
V
V
µA
Unit
V
V
°C
W
W/°C
°C
°C/W
Modulation Spectrum
P_OUT = 40 W, f = 959.8 MHz
2.1
-20
1.9 _EVM
-30
1.7
-40
1.5
-50
400 KHz
1.3
-60
1.1
-70
0.9
600 KHz -80
0.7
-90
0.5
0.47
0.57 0.67 0.77 0.87
Quiescent Current (A)
-100
0.97
EDGE EVM Performance
V_DD = 28 V, I_DQ = 700 mA, f = 959.8 MHz
9
90
8
80
7
70
6
60
5
50
Ef f icienc y
4
40
3
30
2
20
1
EV M
10
0
0
36 38 40 42 44 46 48 50
Output Power (dBm)
All published data at T_CASE = 25°C unless otherwise indicated.
Data Sheet
2
2004-04-05