PTF080901 Datasheet, PDF (1/10 Pages) Infineon Technologies AG – LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz

PTF080901
LDMOS RF Power Field Effect Transistor
90 W, 869–960 MHz
Description
Features
The PTF080901 is a 90 W, internally matched GOLDMOS FET intended
for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold
metallization ensures excellent device lifetime and reliability.
EDGE Modulation Spectrum Performance
V_DD = 28 V, I_DQ = 700 mA, f = 959.8 MHz
0
55
-10
Ef f iciency
50
-20
45
-30
40
-40
35
-50
30
400 kHz
-60
25
• Broadband internal matching
• Typical EDGE performance
- Average output power = 45 W
- Gain = 18 dB
- Efficiency = 40%
• Typical CW performance
- Output power at P–1dB = 120 W
- Gain = 17 dB
- Efficiency = 60%
• Integrated ESD protection: Human Body
Model, Class 1 (minimum)
• Excellent thermal stability
• Low HCI drift
• Capable of handling 10:1 VSWR @ 28 V,
90 W (CW) output power
-70
20
-80
600 kHz
15
-90
10
36 38 40 42 44 46 48 50
PTF080901E
Package 30248
Output Power (dBm)
ESD: Electrostatic discharge sensitive device—observe handling precautions!
PTF080901F
Package 31248
RF Characteristics at T_CASE = 25°C unless otherwise indicated
EDGE Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
V_DD = 28 V, I_DQ = 700 mA, P_OUT = 45 W, f = 959.8 MHz
Characteristic
Symbol Min Typ
Max
Unit
Error Vector Magnitude
EVM (RMS) —
2.5
—
%
Modulation Spectrum @ 400 kHz
ACPR
—
–62
—
dBc
Modulation Spectrum @ 600 kHz
ACPR
—
–74
—
dBc
Gain
Drain Efficiency
G_ps
—
18
—
dB
η_D
—
40
—
%
Two–Tone Measurements (tested in Infineon test fixture)
V_DD = 28 V, I_DQ = 650 mA, P_OUT = 90 W PEP, f = 960 MHz, tone spacing = 1 MHz
Characteristic
Symbol Min Typ
Gain
Drain Efficiency
Intermodulation Distortion
G_ps
η_D
IMD
17
18
40
42
—
–32
Data Sheet
1
Max
—
—
–29
Unit
dB
%
dBc
2004-04-05