PTF080901 Datasheet, PDF (4/10 Pages) Infineon Technologies AG – LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz

Typical Performance (cont.)
Power Sweep
V_DD = 28 V, f = 960 MHz
19.0
18.5 _{IDQ = 820 mA}
18.0
17.5
I_DQ = 650 mA
17.0 ^IDQ ^{= 480 mA}
16.5
37 39 41 43 45 47 49 51 53
Output Power (dBm)
PTF080901
Gain & Efficiency vs. Output Power
V_DD = 28 V, I_DQ = 650 mA, f = 960 MHz
20
19 _Gain
18
17
16
15
Ef f icienc y
14
40
43
46
49
Output Power (dBm)
70
60
50
40
30
20
10
52
Output Power (at 1 dB Compression)
vs. Supply Voltage
I_DQ = 650 mA, f = 960 MHz
52.0
51.5
51.0
50.5
50.0
24
26
28
30
32
Supply Voltage (V)
IS-95 CDMA Performance
V_DD = 28 V, I_DQ = 700 mA, f = 880 MHz
60
-40
50
-45
40
ACP F_C – 0.75 MHz
-50
30
Ef f iciency
20
10
-55
-60
ACPR F_C + 1.98 MHz _-65
0
-70
40
41
42
43
44
45
Output Power (dBm), Avg.
All published data at T_CASE = 25°C unless otherwise indicated.
Data Sheet
4
2004-04-05