PTF080901 Datasheet, PDF (8/10 Pages) Infineon Technologies AG – LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz

PTF080901
Ordering Information
Type
PTF080901E
PTF080901F
Package Outline
30248
31248
Package Outline Specifications
Package Description
Thermally enhanced, flange mount
Thermally enhanced, earless
Marking
PTF080901E
PTF080901F
Package 30248
(45° X 2.72
[.107])
CL
D
2X 4.83±0.51
[.190±.020]
S
9.78
[.385]
19.43 ±0.51
L[ID.3790.4₊0_{-..00+00-6400..]1150 CL}
[.765±.020]
1.02
[.040]
G
2X 12.70
[.500]
27.94
[1.100]
19.81±0.20
[.780±.008]
2X R1.63
[.064]
4X R1.52
[.060]
SPH 1.57
[.062]
0.0381 [.0015] -A-
0.51
[.020]
34.04
[1.340]
3.76±0.38
[.142±.015]
P K G _248_0
Notes: Unless otherwise specified
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. Pins: D = drain, S = source, G = gate
4. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001]
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Data Sheet
8
2004-04-05