PTF080901 Datasheet, PDF (6/10 Pages) Infineon Technologies AG – LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz

PTF080901
Test Circuit
QQ1
LM7805
C21
0.001 µ F
R3
1.2 kV
Q1
BCP56
R4
1.3 kV
R5
C23 ^{10 kV}
0.001 µF
C22
0.001 µF
R6
22 kV
R7
3.3 kV
C1
10 µF, 35 V
C2
0.1 µF
50 V
R1
10 V
C3
33 pF
R2
5.1 kV
RF_IN
l4
DUT
l1
l2
C4
33pF
l3
C5
4.3pF
l5
C6
6.2pF
VDD
C7
33pF
L1
C8
+_C9
1µF
10µF
35V
C10
0.1µF
50V
+ _C11
10µF
35V
l7
l6
l8
C12
2.2pF
l9
C13
1.4pF
C16
C17
33pF
1µF
C15
33pF
l10
l11
RF_OUT
C14
0.5pF
L2
+ _C18
10µF
35V
C19
0.1µF
50V
+ _C20
10µF
35V
080901_sch
Test Circuit Schematic for 960 MHz
Circuit Assembly Information
DUT
PCB
PTF080901
ε 0.76 mm. [.030”] thick, _r = 4.5
LDMOS Transistor
2 oz. copper
Rogers TMM4
Microstrip
l1
l2
l3
l4
l5
l6
l7, l8
l9
l10
l11
Electrical Characteristics at 960 MHz
0.075 λ, 50 Ω
0.101 λ, 50 Ω
0.053 λ, 50 Ω
0.289 λ, 73.66 Ω
0.061 λ, 7.48 Ω
0.097 λ, 7.93 Ω
0.132 λ, 52.47 Ω
0.105 λ, 7.93 Ω
0.134 λ, 38.02 Ω
0.029 λ, 50 Ω
Dimensions: L x W (mm.)
12.83 x 1.35
17.27 x 1.35
9.14 x 1.35
50.80 x 0.75
9.27 x 16.26
14.73 x 15.24
22.61 x 1.27
16.13 x 15.24
22.35 x 2.16
4.95 x 1.37
Dimensions: L x W (in.)
0.505 x 0.053
0.680 x 0.053
0.360 x 0.053
2.000 x 0.030
0.365 x 0.640
0.580 x 0.600
0.890 x 0.050
0.635 x 0.600
0.880 x 0.085
0.195 x 0.053
Data Sheet
6
2004-04-05