PTF041501E Datasheet, PDF (9/11 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 150 W, 450 - 500 MHz

PTF041501E
PTF041501F
Package Outline Specifications
45° X (2.03
[.080])
Package H-30260-2
2X 12.70
[.500]
(2X 4.83±0.50
[.190±.020])
LID 13.21+–00..1150
[.520 ^{+–..000046]}
D
S
G
4X R 1.52
[.060]
2X 3.25
[.128]
FLANGE 13.72
[.540]
23.37±0.51
[.920±.020]
2X 1.63
[.064] R
SPH 1.57
[.062]
22.35±0.23
[.880±.009]
1.02
[.040]
27.94
[1.100]
34.04
[1.340]
4.11±0.38
[.162±.015]
0.0381 [.0015] -A-
260-cases_30260
Diagram Notes:
1. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001].
2. All tolerances ± 0.127 [.005] unless specified otherwise.
3. Pins: D = drain, S = source, G = gate.
4. Interpret dimensions and tolerances per ASME Y14.5M-1994.
5. Primary dimensions are mm. Alternate dimensions are inches.
6. Gold plating thickness:
S - flange: 2.54 micron [100 microinch] (min)
D, G - leads: 1.14 micron ± 0.38 micron [45 microinch ± 15 microinch]
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http://www.infineon.com/products
Data Sheet
9 of 11
Rev. 04, 2007-08-01