PTF041501E Datasheet, PDF (10/11 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 150 W, 450 - 500 MHz

Package Outline Specifications (cont.)
Package H-31260-2
45° X 2.031
[.080]
2X 12.70
[.500]
D
PTF041501E
PTF041501F
2x 4.83±0.50
[.190±.020]
13.72
[.540]
LID
13.21
+0.10
–0.15
[.520
+.004
–.006
]
.
23.37±0.51
[.920±.020]
G
LID 22.35±0.23
[.880±.009]
4X R 0.51
[R.020] MAX
4.11±0.38
[.162±.015]
1.02
[.040]
S
FLANGE 23.11
[.910]
SPH 1.57
[.062]
0.0381 [.0015] -A-
260-cases_31260
Diagram Notes:
1. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001].
2. All tolerances ± 0.127 [.005] unless specified otherwise.
3. Pins: D = drain, S = source, G = gate.
4. Interpret dimensions and tolerances per ASME Y14.5M-1994.
5. Primary dimensions are mm. Alternate dimensions are inches.
6. Gold plating thickness:
S - flange: 2.54 micron [100 microinch] (min)
D, G - leads: 1.14 micron ± 0.38 micron [45 microinch ± 15 microinch]
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Data Sheet
10 of 11
Rev. 04, 2007-08-01