PTF041501E Datasheet, PDF (1/11 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 150 W, 450 - 500 MHz

PTF041501E
PTF041501F
Thermally-Enhanced High Power RF LDMOS FETs
150 W, 450 – 500 MHz
Description
The PTF041501E and PTF041501F are thermally-enhanced, 150-
watt, internally-matched GOLDMOS ^® FETs intended for ultra-linear
CDMA applications. They are characterized for CDMA and
CDMA2000 operation from 450 to 470 MHz. Thermally-enhanced
packaging provides the coolest operation available. Full gold
metallization ensures excellent device lifetime and reliability.
PTF041501E
Package H-30260-2
PTF041501F
Package H-31260-2
CDMA IS-95 Performance
V_DD = 28 V, I_DQ = 900 m A, f = 470 MHz
40
0
35
Efficiency
-10
30
-20
25
-30
20 ^{ACP FC – 0.75 MHz}
-40
15
ACPR F_C + 1.98 MHz ^-50
10
-60
5
-70
36 37 38 39 40 41 42 43 44 45 46 47
Output Power (dBm), Avg.
Features
• Thermally-enhanced packages
• Broadband internal matching
• Typical CDMA performance at 470 MHz, 28 V
- Average output power = 32 W
- Linear Gain = 21 dB
- Efficiency = 31%
• Typical CW performance, 470 MHz, 28 V
- Output power at P–1dB = 165 W
- Efficiency = 61%
• Integrated ESD protection: Human Body Model,
Class 1 (minimum)
• Excellent thermal stability
• Low HCI drift
• Capable of handling 5:1 VSWR @ 28 V,
150 W (CW) output power
RF Characteristics
3-carrier CDMA2000 Measurements (not subject to production test—verified by design/characterization in Infineon test
fixture)
V_DD = 28 V, I_DQ = 900 mA, P_OUT = 60 W average, f = 470 MHz
Characteristic
Symbol Min Typ
Max
Unit
Gain
G_ps
—
21
—
dB
Drain Efficiency
Adjacent Channel Power Ratio
η_D
—
42
—
%
ACPR
—
–45
—
dB
All published data at T_CASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 11
Rev. 04, 2007-08-01