PTF041501E Datasheet, PDF (5/11 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 150 W, 450 - 500 MHz

Typical Performance (cont.)
PTF041501E
PTF041501F
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage,
series show current.
1.03
2.25 A
1.02
4.50 A
6.75 A
1.01
9.00 A
1.00
11.25 A
0.99
13.50 A
0.98
0.97
0.96
-20
0
20
40 60
80 100
Case Temperature (ºC)
Broadband Circuit Impedance
Z Source
D
Z Load
Frequency
MHz
450
455
460
465
470
G
S
Z Source Ω
R
jX
1.07
–3.15
1.03
–3.04
1.02
–2.89
1.01
–2.80
0.99
–2.67
Z Load Ω
R
jX
1.18
0.96
1.21
1.03
1.24
1.17
1.28
1.25
1.26
1.36
Z₀ = 50 Ω
Z Load
470 MHz
450 MHz
Z Source
470 MHz
450 MHz
0.1
Data Sheet
5 of 11
Rev. 04, 2007-08-01