PTF041501E Datasheet, PDF (4/11 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 150 W, 450 - 500 MHz

Typical Performance (cont.)
Gain & Efficiency vs. Output Power
V_DD = 28 V, I_DQ = 900 mA, f = 470 MHz
23
80
22
70
21 ^Gain
60
50
20
40
19
30
18
20
17 _Efficiency
10
16
0
39 41 43 45 47 49 51 53 55
Output Power (dBm)
PTF041501E
PTF041501F
Output Power (at 1 dB Compression)
vs. Supply Voltage
I_DQ = 900 mA, f = 470 MHz
55
54
53
52
51
50
24
26
28
30
32
Supply Voltage (V)
Intermodulation Distortion vs. P_OUT
(in a broadband circuit)
V_DD = 28 V, I_DQ = 900 mA, f₁ = 469 MHz, f₂ = 470 MHz
0
-10
-20
3rd Order
-30
-40
5th
-50
-60
7th
-70
36 38 40 42 44 46 48 50
Output Power (dBm), Avg.
Three-carrier CDMA 2000 Performance
V_DD = 28 V, I_DQ = 900 mA, f = 470 MHz
50
-35
Efficiency
40
-40
30
-45
20
10
0
36
-50
ACP Low
-55
ACP Up
ALT Up
-60
38 40 42 44 46 48 50
Output Power (dBm), Avg.
Data Sheet
4 of 11
Rev. 04, 2007-08-01