PTF041501E Datasheet, PDF (3/11 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 150 W, 450 - 500 MHz

PTF041501E
PTF041501F
Typical Performance (data taken in a production test fixture)
P_OUT, Gain & Efficiency (at P-1dB) vs. Frequency
V_DD = 28 V, I_DQ = 900 mA
23
22
21 _Gain
20
19
65
Efficiency
60
55
Output Power
50
18
450
455
460
465
Frequency (MHz)
45
470
IM3 vs. Output Power at Selected Biases
V_DD = 28 V, f₁ = 469, f₂ = 470 MHz
-20
-25
-30 _{675 mA}
-35
-40 ^{900 mA}
-45
1125 mA
-50
-55
-60
-65
36 38 40 42 44 46 48 50
Output Power (dBm), avg.
Broadband Circuit Performance
V_DD = 28 V, I_DQ = 900 m A, P_OUT avg.. = 48.75 dBm
50
30
Efficiency
40
20
30
Gain
20
10
10
0
Return Loss
-10
0
-20
445 450 455 460 465 470 475
Frequency (MHz)
Power Sweep
V_DD = 28 V, f = 470 MHz
23
22
21
I_DQ = 1125 mA
I_DQ = 900 mA
20
I_DQ = 675 m A
19
18
17
16
39 41 43 45 47 49 51 53 55
Output Power (dBm)
Data Sheet
3 of 11
Rev. 04, 2007-08-01