PTF041501E Datasheet, PDF (2/11 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 150 W, 450 - 500 MHz

PTF041501E
PTF041501F
RF Characteristics (cont.)
Two-tone Measurements (tested in Infineon test fixture)
V_DD = 28 V, I_DQ = 900 mA, P_OUT = 150 W PEP, f = 470 MHz, tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol Min Typ
G_ps
20.0
21
η_D
45
46
IMD
—
–30
Max
—
—
–29
Unit
dB
%
dBc
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
Conditions
V_GS = 0 V, I_DS = 10 µA
V_DS = 28 V, V_GS = 0 V
V_GS = 10 V, V_DS = 0.1 V
V_DS = 28 V, I_DQ = 900 mA
V_GS = 10 V, V_DS = 0 V
Symbol
V_(BR)DSS
I_DSS
R_DS(on)
V_GS
I_GSS
Min
65
—
—
2
—
Typ
—
—
0.07
2.9
—
Max
—
1.0
—
4
1.0
Unit
V
µA
Ω
V
µA
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (T_CASE = 70°C, 150 W CW)
Symbol
V_DSS
V_GS
T_J
P_D
T_STG
R_θJC
Value
65
–0.5 to +12
200
625
3.57
–40 to +150
0.28
Unit
V
V
°C
W
W/°C
°C
°C/W
Ordering Information
Type
PTF041501E
PTF041501F
Package Outline
H-30260-2
H-31260-2
Package Description
Thermally-enhanced slotted flange, single-ended
Thermally-enhanced earless flange, single-ended
Marking
PTF041501E
PTF041501F
Data Sheet
2 of 11
Rev. 04, 2007-08-01