PTF041501E Datasheet, PDF (6/11 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 150 W, 450 - 500 MHz

PTF041501E
PTF041501F
Reference Circuit
C1
0.001µF
R2
1.3KV
R1
1.2KV
QQ1
LM7805
Q1
VDD
BCP56
C0.2001µF _C03.001µF
R3
2KV
R4
2KV
R35.3K_V
1R06V
1C04µF
35V
0C.51µF 5R.71KV 1C260pF
l5
L1
C10
C11
100pF 1µF
C12
10µF
50V
l8
C13 C14
VDD
0.1µF 10µF
50V
50V
RF_IN
C7
100pF
l1
l2
l3
l4
C8
2.1pF
l6
C9
4.3pF
DUT
l7
l11
l9
C15
5.6pF
l12
C16
5.1pF
C17
11pF
l13 l 14
C18
11pF
C19
100pF
l15
C20
8.2pF
l10
C21
C22
100pF 1µF
L2
C23
10µF
50V
C24
0.1µF
50V
C25
10µF
50V
RF_OUT
041501ef_sch
Reference circuit schematic for f = 460 MHz
Circuit Assembly Information
DUT
PTF041501E or PTF041501F
PCB
0.76 mm [.030"] thick, ε_r = 9.2
LDMOS Transistor
Rogers TMM10
Microstrip
Electrical Characteristics at 460 MHz¹
l1
0.016 λ, 50.0 Ω
l2
0.033 λ, 24.0 Ω
l3
0.025 λ, 24.0 Ω
l4
0.097 λ, 4.8 Ω
l5
0.081 λ, 50.0 Ω
l6
0.040 λ, 4.8 Ω
l7
0.158 λ, 38.0 Ω
l8
0.030 λ, 10.9 Ω
l9
0.158 λ, 38.0 Ω
l10
0.030 λ, 10.9 Ω
l11
0.025 λ, 5.6 Ω
l12
0.105 λ, 5.6 Ω
l13
0.006 λ, 5.6 Ω
l14
0.104 λ, 21.3 Ω
l15
0.014 λ, 50.0 Ω
1 _{Electrical characteristics are rounded.}
Dimensions: L x W (mm)
4.32 x 0.71
8.13 x 2.54
6.10 x 2.54
21.59 x 17.78
21.59 x 0.71
8.89 x 17.78
40.64 x 1.27
5.59 x 7.11
40.64 x 1.27
5.59 x 7.11
5.59 x 15.24
23.62 x 15.24
1.27 x 15.24
25.40 x 3.05
3.81 x 0.71
2 oz. copper
Dimensions: L x W (in.)
0.170 x 0.028
0.320 x 0.100
0.240 x 0.100
0.850 x 0.700
0.850 x 0.028
0.350 x 0.700
1.600 x 0.050
0.220 x 0.280
1.600 x 0.050
0.220 x 0.280
0.220 x 0.600
0.930 x 0.600
0.050 x 0.600
1.000 x 0.120
0.150 x 0.028
Data Sheet
6 of 11
Rev. 04, 2007-08-01