IKW50N65ES5_15 Datasheet, PDF (9/16 Pages) Infineon Technologies AG – high Speed soft switching IGBT with full current rated RAPID 1 diode

IKW50N65ES5
TRENCHSTOP^TM5softswitchingIGBT
150
Tvj = 25°C
135
Tvj = 150°C
120
3.0
IC = 25A
IC = 50A
IC = 100A
2.5
105
2.0
90
75
1.5
60
1.0
45
30
0.5
15
0
2 3 4 5 6 7 8 9 10
VGE,GATE-EMITTERVOLTAGE[V]
Figure 5. Typicaltransfercharacteristic
(VCE=20V)
0.0
25
50
75
100 125 150 175
Tvj,JUNCTIONTEMPERATURE[°C]
Figure 6. Typicalcollector-emittersaturationvoltageas
afunctionofjunctiontemperature
(VGE=15V)
1000
td(off)
tf
td(on)
tr
1000
td(off)
tf
td(on)
tr
100
100
10
10
1
1
0
25
50
75
100 125 150
0
10
20
30
40
50
IC,COLLECTORCURRENT[A]
RG,GATERESISTANCE[Ω]
Figure 7. Typicalswitchingtimesasafunctionof
collectorcurrent
(inductiveload,Tvj=150°C,VCE=400V,
VGE=0/15V,RGon=8.2Ω,RGoff=8.2Ω,dynamic
test circuit in Figure E)
Figure 8. Typicalswitchingtimesasafunctionofgate
resistance
(inductiveload,Tvj=150°C,VCE=400V,
VGE=0/15V,IC=50A,dynamictestcircuitin
Figure E)
9
Rev.2.1,2015-09-22