IKW50N65ES5_15 Datasheet, PDF (6/16 Pages) Infineon Technologies AG – high Speed soft switching IGBT with full current rated RAPID 1 diode

IKW50N65ES5
TRENCHSTOP^TM5softswitchingIGBT
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(on)
Tvj=25°C,
-
18
- ns
tr
VCC=400V,IC=25.0A,
VGE=0.0/15.0V,
td(off)
RG(on)=8.2Ω,RG(off)=8.2Ω,
-
9
- ns
- 141 - ns
tf
Lσ=30nH,Cσ=30pF
Lσ,CσfromFig.E
-
22
- ns
Eon
Energy losses include “tail” and
- 0.50 - mJ
Eoff
diode reverse recovery.
- 0.25 - mJ
Ets
- 0.75 - mJ
DiodeCharacteristic,atTvj=25°C
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
Tvj=25°C,
VR=400V,
IF=50.0A,
diF/dt=1150A/µs
Tvj=25°C,
VR=400V,
IF=25.0A,
diF/dt=1370A/µs
-
70
- ns
- 1.25 - µC
- 25.0 - A
- -2120 - A/µs
-
58
- ns
- 0.86 - µC
- 22.5 - A
- -2125 - A/µs
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
IGBTCharacteristic,atTvj=150°C
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
Tvj=150°C,
VCC=400V,IC=50.0A,
VGE=0.0/15.0V,
RG(on)=8.2Ω,RG(off)=8.2Ω,
Lσ=30nH,Cσ=30pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
Tvj=150°C,
VCC=400V,IC=25.0A,
VGE=0.0/15.0V,
RG(on)=8.2Ω,RG(off)=8.2Ω,
Lσ=30nH,Cσ=30pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
Value
Unit
min. typ. max.
-
19
- ns
-
26
- ns
- 151 - ns
-
47
- ns
- 1.63 - mJ
- 0.85 - mJ
- 2.48 - mJ
-
18
- ns
-
10
- ns
- 180 - ns
-
46
- ns
- 0.79 - mJ
- 0.45 - mJ
- 1.24 - mJ
6
Rev.2.1,2015-09-22