IKW50N65ES5_15 Datasheet, PDF (11/16 Pages) Infineon Technologies AG – high Speed soft switching IGBT with full current rated RAPID 1 diode

IKW50N65ES5
TRENCHSTOP^TM5softswitchingIGBT
3.0
Eoff
Eon
Ets
2.5
2.0
4.0
Eoff
Eon
3.5
Ets
3.0
2.5
1.5
2.0
1.5
1.0
1.0
0.5
0.5
0.0
25
50
75 100 125 150 175
Tvj,JUNCTIONTEMPERATURE[°C]
Figure 13. Typicalswitchingenergylossesasa
functionofjunctiontemperature
(inductiveload,VCE=400V,VGE=0/15V,
IC=50A,RGon=8.2Ω,RGoff=8.2Ω,dynamictest
circuit in Figure E)
0.0
200 250 300 350 400 450 500
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 14. Typicalswitchingenergylossesasa
functionofcollectoremittervoltage
(inductiveload,Tvj=150°C,VGE=0/15V,
IC=50A,RGon=8.2Ω,RGoff=8.2Ω,dynamictest
circuit in Figure E)
16
VCC=130V
VCC=520V
14
1E+4
Cies
Coes
Cres
12
1000
10
8
100
6
4
10
2
0
0
20
40
60
80
100 120
QGE,GATECHARGE[nC]
1
0
5
10
15
20
25
30
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 15. Typicalgatecharge
(IC=50A)
Figure 16. Typicalcapacitanceasafunctionof
collector-emittervoltage
(VGE=0V,f=1MHz)
11
Rev.2.1,2015-09-22