IKW50N65ES5_15 Datasheet, PDF (2/16 Pages) Infineon Technologies AG – high Speed soft switching IGBT with full current rated RAPID 1 diode

IKW50N65ES5
TRENCHSTOP^TM5softswitchingIGBT
TRENCHSTOP^TM5highspeedsoftswitchingIGBTcopackedwithfullcurrent
ratedRAPID1fastandsoftantiparalleldiode

FeaturesandBenefits:
C
HighspeedS5technologyoffering
•Highspeedsmoothswitchingdeviceforhard&softswitching
•VeryLowVCEsat,1.35Vatnominalcurrent
•PlugandplayreplacementofpreviousgenerationIGBTs
•650Vbreakdownvoltage
•LowgatechargeQG
•IGBTcopackedwithfullratedRAPID1fastantiparalleldiode
•Maximumjunctiontemperature175°C
•QualifiedaccordingtoJEDECfortargetapplications
•Pb-freeleadplating;RoHScompliant
•CompleteproductspectrumandPSpiceModels:
http://www.infineon.com/igbt/
G
E
Applications:
•Resonantconverters
•Uninterruptiblepowersupplies
•Weldingconverters
•Midtohighrangeswitchingfrequencyconverters
Packagepindefinition:
1
2
3
•Pin1-gate
•Pin2&backside-collector
•Pin3-emitter
KeyPerformanceandPackageParameters
Type
VCE
IC
VCEsat,Tvj=25°C
IKW50N65ES5
650V 50A
1.35V
Tvjmax
175°C
Marking
K50EES5
Package
PG-TO247-3
2
Rev.2.1,2015-09-22