IKW50N65ES5_15 Datasheet, PDF (12/16 Pages) Infineon Technologies AG – high Speed soft switching IGBT with full current rated RAPID 1 diode

IKW50N65ES5
TRENCHSTOP^TM5softswitchingIGBT
1
1
D = 0.5
D = 0.5
0.2
0.2
0.1
0.1
0.1
0.1
0.05
0.05
0.02
0.02
0.01
0.01
single pulse
single pulse
0.01
0.01
0.001
1E-7
i:
1
2
3
4
5
ri[K/W]: 0.030556 0.137971 0.162007 0.15972 0.059746
τi[s]: 2.4E-5 3.1E-4 3.1E-3 0.024936 0.134448
1E-6 1E-5 1E-4 0.001 0.01 0.1 1
tp,PULSEWIDTH[s]
Figure 17. IGBTtransientthermalimpedance
(D=tp/T)
0.001
1E-7
1E-6
i:
1
2
3
4
ri[K/W]: 0.066623 0.198269 0.201696 0.163411
τi[s]: 2.1E-5 3.7E-4 5.5E-3 0.057467
1E-5 1E-4 0.001 0.01 0.1 1
tp,PULSEWIDTH[s]
Figure 18. Diodetransientthermalimpedanceasa
functionofpulsewidth
(D=tp/T)
180
Tvj = 25°C, IF = 50A
Tvj = 150°C, IF = 50A
160
140
120
100
3.5
Tvj = 25°C, IF = 50A
Tvj = 150°C, IF = 50A
3.0
2.5
2.0
80
1.5
60
1.0
40
0.5
20
0
700 800 900 1000 1100 1200 1300
diF/dt,DIODECURRENTSLOPE[A/µs]
Figure 19. Typicalreverserecoverytimeasafunction
ofdiodecurrentslope
(VR=400V)
0.0
700 800 900 1000 1100 1200 1300
diF/dt,DIODECURRENTSLOPE[A/µs]
Figure 20. Typicalreverserecoverychargeasa
functionofdiodecurrentslope
(VR=400V)
12
Rev.2.1,2015-09-22