IKW50N65ES5_15 Datasheet, PDF (7/16 Pages) Infineon Technologies AG – high Speed soft switching IGBT with full current rated RAPID 1 diode

IKW50N65ES5
TRENCHSTOP^TM5softswitchingIGBT
DiodeCharacteristic,atTvj=150°C
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
Tvj=150°C,
VR=400V,
IF=50.0A,
diF/dt=1150A/µs
Tvj=150°C,
VR=400V,
IF=25.0A,
diF/dt=1370A/µs
- 115 - ns
- 2.80 - µC
- 38.0 - A
- -1550 - A/µs
-
92
- ns
- 2.10 - µC
- 35.0 - A
- -2010 - A/µs
7
Rev.2.1,2015-09-22