IKW50N65ES5_15 Datasheet, PDF (10/16 Pages) Infineon Technologies AG – high Speed soft switching IGBT with full current rated RAPID 1 diode

IKW50N65ES5
TRENCHSTOP^TM5softswitchingIGBT
1000
td(off)
tf
td(on)
tr
6
typ.
min.
max.
5
100
4
3
10
2
1
1
25
50
75 100 125 150 175
Tvj,JUNCTIONTEMPERATURE[°C]
Figure 9. Typicalswitchingtimesasafunctionof
junctiontemperature
(inductiveload,VCE=400V,VGE=0/15V,
IC=50A,RGon=8.2Ω,RGoff=8.2Ω,dynamictest
circuit in Figure E)
0
25
50
75
100
125
150
Tvj,JUNCTIONTEMPERATURE[°C]
Figure 10. Gate-emitterthresholdvoltageasafunction
ofjunctiontemperature
(IC=0.5mA)
14
Eoff
Eon
Ets
12
10
5
Eoff
Eon
Ets
4
3
8
6
2
4
1
2
0
0
0
25
50
75
100 125 150
0
10
20
30
40
50
IC,COLLECTORCURRENT[A]
RG,GATERESISTANCE[Ω]
Figure 11. Typicalswitchingenergylossesasa
functionofcollectorcurrent
(inductiveload,Tvj=150°C,VCE=400V,
VGE=0/15V,RGon=8.2Ω,RGoff=8.2Ω,dynamic
test circuit in Figure E)
Figure 12. Typicalswitchingenergylossesasa
functionofgateresistance
(inductiveload,Tvj=150°C,VCE=400V,
VGE=0/15V,IC=50A,dynamictestcircuitin
Figure E)
10
Rev.2.1,2015-09-22