IKW50N65ES5_15 Datasheet, PDF (4/16 Pages) Infineon Technologies AG – high Speed soft switching IGBT with full current rated RAPID 1 diode

IKW50N65ES5
TRENCHSTOP^TM5softswitchingIGBT
MaximumRatings
Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet.
Parameter
Collector-emittervoltage,Tvj≥25°C
DCcollectorcurrent,limitedbyTvjmax
TC=25°Cvaluelimitedbybondwire
TC=100°C
Pulsedcollectorcurrent,tplimitedbyTvjmax
Turn off safe operating area
VCE≤650V,Tvj≤175°C,tp=1µs
Diodeforwardcurrent,limitedbyTvjmax
TC=25°Cvaluelimitedbybondwire
TC=100°C
Diodepulsedcurrent,tplimitedbyTvjmax
Gate-emitter voltage
TransientGate-emittervoltage(tp≤10µs,D<0.010)
PowerdissipationTC=25°C
PowerdissipationTC=100°C
Operating junction temperature
Storage temperature
Soldering temperature,
wave soldering 1.6mm (0.063in.) from case for 10s
Symbol
VCE
IC
ICpuls
-
IF
IFpuls
VGE
Ptot
Tvj
Tstg
Value
Unit
650
V
80.0
A
60.5
200.0
A
200.0
A
80.0
A
60.5
5.0
A
±20
±30
V
274.0
137.0
W
-40...+175
°C
-55...+150
°C
260
°C
Mounting torque, M3 screw
Maximum of mounting processes: 3
M
0.6
Nm
ThermalResistance
Parameter
Characteristic
IGBT thermal resistance,
junction - case
Diode thermal resistance,
junction - case
Thermal resistance
junction - ambient
Symbol Conditions
Rth(j-c)
Rth(j-c)
Rth(j-a)
Max.Value
Unit
0.55
K/W
0.63
K/W
40
K/W
4
Rev.2.1,2015-09-22