IKW40N65F5_13 Datasheet, PDF (9/18 Pages) Infineon Technologies AG – 650V DuoPack IGBT and Diode High speed switching series fifth generation

IKW40N65F5,IKP40N65F5
Highspeedswitchingseriesfifthgeneration
120
100
VGE=20V
18V
80
15V
12V
60
10V
8V
40
7V
6V
5V
20
120
Tj=25°C
Tj=150°C
100
80
60
40
20
0
0
1
2
3
4
5
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 5. Typicaloutputcharacteristic
(Tvj=150°C)
0
4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5
VGE,GATE-EMITTERVOLTAGE[V]
Figure 6. Typicaltransfercharacteristic
(VCE=20V)
2.50
2.25
2.00
1.75
IC=10A
IC=20A
IC=40A
1000
td(off)
tf
td(on)
tr
100
1.50
1.25
10
1.00
0.75
0.50
0
25 50 75 100 125 150 175
Tvj,JUNCTIONTEMPERATURE[°C]
1
0
20
40
60
80
100 120
IC,COLLECTORCURRENT[A]
Figure 7. Typicalcollector-emittersaturationvoltageas Figure 8. Typicalswitchingtimesasafunctionof
afunctionofjunctiontemperature
collectorcurrent
(VGE=15V)
(inductiveload,Tvj=150°C,VCE=400V,
VGE=15/0V,rG=15Ω,Dynamictestcircuitin
Figure E)
9
Rev.1.2,2013-12-18