IKW40N65F5_13 Datasheet, PDF (12/18 Pages) Infineon Technologies AG – 650V DuoPack IGBT and Diode High speed switching series fifth generation

IKW40N65F5,IKP40N65F5
Highspeedswitchingseriesfifthgeneration
1E+4
1000
Ciss
Coss
Crss
100
10
1
D=0.5
0.2
0.1
0.1
0.05
0.02
0.01
single pulse
0.01
1
0
5
10
15
20
25
30
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 17. Typicalcapacitanceasafunctionof
collector-emittervoltage
(VGE=0V,f=1MHz)
0.001
1E-6
i:
1
2
3
4
ri[K/W]: 0.08245484 0.144197 0.2151774 0.1581708
τi[s]: 7.3E-5
7.0E-4 0.01235548 0.08020881
1E-5 1E-4 0.001 0.01 0.1
1
tp,PULSEWIDTH[s]
Figure 18. IGBTtransientthermalresistance
(D=tp/T)
130
Tj=25°C, IF = 20A
1
Tj=150°C, IF = 20A
120
D=0.5
110
0.2
0.1
100
0.1
0.05
0.02
90
0.01
single pulse
80
70
0.01
60
0.001
1E-7
1E-6
i:
1
2
3
ri[K/W]: 0.6701584 0.775759 0.3540826
τi[s]: 3.4E-4
4.7E-3 0.04680901
1E-5 1E-4 0.001 0.01 0.1 1
tp,PULSEWIDTH[s]
Figure 19. Diodetransientthermalimpedanceasa
functionofpulsewidth
(D=tp/T)
50
40
500
700
900
1100 1300 1500
diF/dt,DIODECURRENTSLOPE[A/µs]
Figure 20. Typicalreverserecoverytimeasafunction
ofdiodecurrentslope
(VR=400V)
12
Rev.1.2,2013-12-18