IKW40N65F5_13 Datasheet, PDF (6/18 Pages) Infineon Technologies AG – 650V DuoPack IGBT and Diode High speed switching series fifth generation

IKW40N65F5,IKP40N65F5
Highspeedswitchingseriesfifthgeneration
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(on)
Tvj=25°C,
-
20
- ns
tr
VCC=400V,IC=5.0A,
VGE=0.0/15.0V,
td(off)
rG=15.0Ω,Lσ=30nH,
-
4
- ns
- 175 - ns
tf
Cσ=30pF
Lσ,CσfromFig.E
-
10
- ns
Eon
Energy losses include “tail” and
- 0.07 - mJ
Eoff
diode reverse recovery.
- 0.03 - mJ
Ets
- 0.10 - mJ
DiodeCharacteristic,atTvj=25°C
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
Tvj=25°C,
VR=400V,
IF=20.0A,
diF/dt=1000A/µs
Tvj=25°C,
VR=400V,
IF=5.0A,
diF/dt=1000A/µs
-
60
- ns
- 0.45 - µC
- 12.4 - A
- -280 - A/µs
-
33
- ns
- 0.22 - µC
- 10.6 - A
- -1030 - A/µs
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
IGBTCharacteristic,atTvj=150°C
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
Tvj=150°C,
VCC=400V,IC=20.0A,
VGE=0.0/15.0V,
rG=15.0Ω,Lσ=30nH,
Cσ=30pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
Tvj=150°C,
VCC=400V,IC=5.0A,
VGE=0.0/15.0V,
rG=15.0Ω,Lσ=30nH,
Cσ=30pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
Value
Unit
min. typ. max.
-
20
- ns
-
14
- ns
- 185 - ns
-
15
- ns
- 0.50 - mJ
- 0.16 - mJ
- 0.66 - mJ
-
18
- ns
-
5
- ns
- 220 - ns
-
12
- ns
- 0.14 - mJ
- 0.05 - mJ
- 0.19 - mJ
6
Rev.1.2,2013-12-18