IKW40N65F5_13 Datasheet, PDF (5/18 Pages) Infineon Technologies AG – 650V DuoPack IGBT and Diode High speed switching series fifth generation

IKW40N65F5,IKP40N65F5
Highspeedswitchingseriesfifthgeneration
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
Symbol Conditions
StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES
Collector-emitter saturation voltage VCEsat
Diode forward voltage
VF
Gate-emitter threshold voltage
VGE(th)
Zero gate voltage collector current ICES
Gate-emitter leakage current
IGES
Transconductance
gfs
VGE=0V,IC=0.20mA
VGE=15.0V,IC=40.0A
Tvj=25°C
Tvj=125°C
Tvj=175°C
VGE=0V,IF=20.0A
Tvj=25°C
Tvj=125°C
Tvj=175°C
IC=0.40mA,VCE=VGE
VCE=650V,VGE=0V
Tvj=25°C
Tvj=175°C
VCE=0V,VGE=20V
VCE=20V,IC=40.0A
Value
Unit
min. typ. max.
650 -
-V
-
-
1.60 2.10
1.80 -
V
- 1.90 -
-
-
1.45 1.80
1.40 -
V
- 1.40 -
3.2 4.0 4.8 V
-
- 40.0 µA
-
- 4000.0
-
- 100 nA
- 50.0 - S
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
DynamicCharacteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance
measured 5mm (0.197 in.) from
case
Symbol Conditions
Cies
Coes
VCE=25V,VGE=0V,f=1MHz
Cres
QG
VCC=520V,IC=40.0A,
VGE=15V
LE
PG-TO247-pinGCE
PG-TO220-3
Value
Unit
min. typ. max.
- 2500 -
-
50
- pF
-
9
-
- 95.0 - nC
- ^13.0 - nH
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
IGBTCharacteristic,atTvj=25°C
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
Tvj=25°C,
VCC=400V,IC=20.0A,
VGE=0.0/15.0V,
rG=15.0Ω,Lσ=30nH,
Cσ=30pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
Value
Unit
min. typ. max.
-
19
- ns
-
13
- ns
- 160 - ns
-
16
- ns
- 0.36 - mJ
- 0.10 - mJ
- 0.46 - mJ
5
Rev.1.2,2013-12-18