IKW40N65F5_13 Datasheet, PDF (4/18 Pages) Infineon Technologies AG – 650V DuoPack IGBT and Diode High speed switching series fifth generation

IKW40N65F5,IKP40N65F5
Highspeedswitchingseriesfifthgeneration
Maximumratings
Parameter
Collector-emitter voltage
DCcollectorcurrent,limitedbyTvjmax
TC=25°C
TC=100°C
Pulsedcollectorcurrent,tplimitedbyTvjmax
TurnoffsafeoperatingareaVCE≤650V,Tvj≤175°C
Diodeforwardcurrent,limitedbyTvjmax
TC=25°C
TC=100°C
Diodepulsedcurrent,tplimitedbyTvjmax
Gate-emitter voltage
TransientGate-emittervoltage(tp≤10µs,D<0.010)
PowerdissipationTC=25°C
PowerdissipationTC=100°C
Operating junction temperature
Storage temperature
Soldering temperature,
wave soldering 1.6 mm (0.063 in.) from case for 10s
Mounting torque, M3 screw
Maximum of mounting processes: 3
Symbol
VCE
Value
650
IC
ICpuls
-
74.0
46.0
120.0
120.0
IF
IFpuls
VGE
Ptot
Tvj
Tstg
36.0
21.0
120.0
±20
±30
255.0
120.0
-40...+175
-55...+150
PG-TO247-pinGCE
260
PG-TO220-3
260
M
0.6
Unit
V
A
A
A
A
A
V
W
°C
°C
°C
Nm
ThermalResistance
Parameter
Characteristic
IGBT thermal resistance,
junction - case
Diode thermal resistance,
junction - case
Thermal resistance
junction - ambient
Symbol Conditions
Rth(j-c)
Rth(j-c)
Rth(j-a)
PG-TO247-pinGCE
PG-TO220-3
Max.Value
Unit
0.60
K/W
1.80
K/W
40
62
K/W
4
Rev.1.2,2013-12-18