IKW40N65F5_13 Datasheet, PDF (8/18 Pages) Infineon Technologies AG – 650V DuoPack IGBT and Diode High speed switching series fifth generation

IKW40N65F5,IKP40N65F5
Highspeedswitchingseriesfifthgeneration
275
100
250
225
200
175
10
tp=1µs
150
10µs
50µs
125
100µs
100
1
200µs
75
500µs
50
DC
25
0.1
1
10
100
1000
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 1. Forwardbiassafeoperatingarea
(D=0,TC=25°C,Tvj≤175°C;VGE=15V.
RecommendeduseatVGE≥7.5V)
0
25
50
75
100 125 150 175
TC,CASETEMPERATURE[°C]
Figure 2. Powerdissipationasafunctionofcase
temperature
(Tvj≤175°C)
80
120
70
100
VGE=20V
60
18V
80
50
15V
12V
40
60
10V
8V
30
40
7V
6V
20
5V
20
10
0
25
50
75 100 125 150 175
TC,CASETEMPERATURE[°C]
Figure 3. Collectorcurrentasafunctionofcase
temperature
(VGE≥15V,Tvj≤175°C)
0
0
1
2
3
4
5
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 4. Typicaloutputcharacteristic
(Tvj=25°C)
8
Rev.1.2,2013-12-18